rev. 2.4 page 1 2009-11-10 sipmos ? power transistor ? n channel ? enhancement mode ? avalanche-rated ? logic level pin 1 pin 2 pin 3 g d s type v ds i d r ds(on ) package pb-free buz 31 l h 200 v 13.5 a 0.2 pg-to 220-3 yes maximum ratings parameter symbol values unit continuous drain current t c = 28 ?c i d 13.5 a pulsed drain current t c = 25 ?c i dpuls 54 avalanche current,limited by t jmax i ar 13.5 avalanche energy,periodic limited by t jmax e ar 9 mj avalanche energy, single pulse i d = 13.5 a, v dd = 50 v, r gs = 25 l = 1.65 mh, t j = 25 ?c e as 200 gate source voltage v gs 20 v esd-sensitivity hbm as per mil-std 883 class 1 power dissipation t c = 25 ?c p tot 95 w operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip case r thjc 1.32 k/w thermal resistance, chip to ambient r thja 75 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 buz 31l h
buz 31l h rev. 2.4 page 2 2009-11-10 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 c v (br)dss 200 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 200 v, v gs = 0 v, t j = 25 c v ds = 200 v, v gs = 0 v, t j = 125 c i dss - - 10 0.1 100 1 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-resistance v gs = 5 v, i d = 7 a r ds(on) - 0.16 0.2 w
buz 31l h rev. 2.4 page 3 2009-11-1 0 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 7 a g fs 5 12 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 1200 1600 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 200 300 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 100 150 turn-on delay time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t d(on) - 25 40 ns rise time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t r - 80 120 turn-off delay time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t d(off) - 210 270 fall time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t f - 65 85
buz 31l h rev. 2.4 page 4 2009-11-1 0 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - 13.5 a inverse diode direct current,pulsed t c = 25 c i sm - - 54 inverse diode forward voltage v gs = 0 v, i f = 27 a v sd - 1.2 1.6 v reverse recovery time v r = 100 v, i f = l s, d i f /d t = 100 a/s t rr - 180 - ns reverse recovery charge v r = 100 v, i f = l s, d i f /d t = 100 a/s q rr - 1.2 - c
buz 31l h rev. 2.4 page 5 2009-11-10 power dissipation p tot = | ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 w 100 p tot drain current i d = | ( t c ) parameter: v gs 3 5 v 0 20 40 60 80 100 120 c 160 t c 0 1 2 3 4 5 6 7 8 9 10 11 12 a 14 i d safe operating area i d = | ( v ds ) parameter: d = 0.01 , t c = 25c -1 10 0 10 1 10 2 10 a i d 10 0 10 1 10 2 v v ds r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 15.0s transient thermal impedance z th jc = | ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
buz 31l h rev. 2.4 page 6 2009-11-10 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s , t j = 25 c 0 2 4 6 8 v 11 v ds 0 2 4 6 8 10 12 14 16 18 20 22 24 26 a 30 i d v gs [v] a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 9.0 l p tot = 95w l 10.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: t p = 80 s, t j = 25 c 0 4 8 12 16 20 a 26 i d 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 w 0.65 r ds (on) v gs [v] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 9.0 l l 10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 0 1 2 3 4 5 6 7 8 v 10 v gs 0 2 4 6 8 10 12 14 16 18 a 22 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds 3 2 x i d x r ds(on)max 0 2 4 6 8 10 12 14 16 a 20 i d 0 2 4 6 8 10 12 14 s 18 g fs
buz 31l h rev. 2.4 page 7 2009-11-10 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 7 a, v gs = 5 v -60 -20 20 60 100 c 160 t j 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 w 0.65 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs = 0v, f = 1mhz 0 5 10 15 20 25 30 v 40 v ds -2 10 -1 10 0 10 1 10 nf c c rss c oss c iss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -1 10 0 10 1 10 2 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
buz 31l h rev. 2.4 page 8 2009-11-10 avalanche energy e as = | ( t j ) parameter: i d = 13.5 a, v dd = 50 v r gs = 25 w , l = 1.65 mh 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 140 160 180 mj 220 e as typ. gate charge v gs = | ( q gate ) parameter: i d puls = 21 a 0 20 40 60 80 100 120 nc 150 q gate 0 2 4 6 8 10 12 v 16 v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 c 160 t j 180 185 190 195 200 205 210 215 220 225 230 v 240 v (br)dss
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